EXPERIMENTAL CHARACTERIZATION OF HOT-ELECTRON-INDUCED EFFECTS AND LIGHT-EMISSION IN HETEROSTRUCTURE DEVICES

被引：3

作者：

ZANONI, E

NEVIANI, A

TEDESCO, C

MANFREDI, M

CANALI, C

机构：

[1] FAC INGN,I-41100 MODENA,ITALY

[2] UNIV PARMA,DIPARTIMENTO FIS,I-43100 PARMA,ITALY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the most recent experimental results concerning the characterization of hot-electron effects and light emission in GaAs MESFETS, AlGaAs/GaAs and AlGaAs/InGaAs high electron mobility transistors (HEMTS), and AlGaAs/GaAs heterojunction bipolar transistors (HBTS). In MESFETs and HEMTS, light emission has been correlated with impact-ionization-induced gate current, providing insights into possible emission mechanisms. In HBTS, impact ionization can be evaluated by measuring the changes in the base current as a function of base-collector voltage. The measured multiplication factor correlates well with the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime.

引用

页码：651 / 658

页数：8

共 23 条

[1] THE GATE-BIAS DEPENDENCY OF BREAKDOWN LOCATION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS) [J].