ASYMMETRICAL EMISSION PROFILES FROM LOW-FREQUENCY DISCHARGES IN SF6 AND IN N2 GASES IN A PLANAR DIODE WITH A SI-WAFER

被引：4

作者：

SUGANOMATA, S

ISHIKAWA, I

TANAKA, J

OZAKI, H

机构：

[1] Yamanashi University, Kofu

[2] Canon Inc, Tokyo, 146, Shimomaruko 3, Ohtaku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 01期

关键词：

EMISSION PROFILE; PLANAR DIODE WITH SI-WAFER; DISCHARGE STRUCTURE; SF6; N2;

D O I：

10.1143/JJAP.30.180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Asymmetrical emission profiles were observed on such spectral lines as F I 703.7 and S II 545.4 mm from SF6 discharge, and N2 337.1 and N2+ 391.4 nm from N2 discharge. The intensity ratio of N2+ 391.4 to N2 337.1 clearly shows that the observed asymmetries originate from the asymmetrical field distribution induced by an electrically floating Si-wafer mounted on one of the two plane electrodes.

引用

页码：180 / 181

页数：2