FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET

[1] BENKOWITZMATTUC.JB, 1965, J ELECTROCHEM SOC, V112, P583

[2] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 931 - &

[3] BROWN DM, 1966, J ELECTROCHEM SOC, V115, P874

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[5] HIGH-SPEED P-CHANNEL RANDOM-ACCESS 1024-BIT MEMORY MADE WITH ELECTRON LITHOGRAPHY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (02) : 92 - 97

[6] HIGASHINAKAGAWA K, COMMUNICATION

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] MOCHIZUKI T, 1977, FAL EL SOC M, V72, P331

[9] MOCHIZUKI T, UNPUBLISHED

[10] YANAGAWA F, 1979, JAPAN J APPL PHY S18, V18, P237

[1] BENKOWITZMATTUC.JB, 1965, J ELECTROCHEM SOC, V112, P583

[2] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 931 - &

[3] BROWN DM, 1966, J ELECTROCHEM SOC, V115, P874

[4] 1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 291 - 293

[5] HIGH-SPEED P-CHANNEL RANDOM-ACCESS 1024-BIT MEMORY MADE WITH ELECTRON LITHOGRAPHY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (02) : 92 - 97

[6] HIGASHINAKAGAWA K, COMMUNICATION

[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 : 37 - 42

[8] MOCHIZUKI T, 1977, FAL EL SOC M, V72, P331

[9] MOCHIZUKI T, UNPUBLISHED

[10] YANAGAWA F, 1979, JAPAN J APPL PHY S18, V18, P237