INFLUENCE OF THE GRAIN-STRUCTURE ON THE FERMI LEVEL IN POLYCRYSTALLINE SILICON - A QUANTUM SIZE EFFECT

[1] EFFECT OF IMPURITIES ON THE GRAIN-GROWTH OF CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS [J]. MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) : 235 - 245

[2] THEORY OF CONDUCTION IN POLYSILICON - DRIFT-DIFFUSION APPROACH IN CRYSTALLINE-AMORPHOUS-CRYSTALLINE SEMICONDUCTOR SYSTEM .1. SMALL-SIGNAL THEORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 480 - 493

[3] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[4] LEE DS, 1983, IEEE T ELECTRON DEV, V30, P626

[5] INFLUENCE OF A RESISTIVE SUBLAYER AT THE POLYSILICON SILICON DIOXIDE INTERFACE ON MOS PROPERTIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 833 - 836

[6] DEPENDENCE OF THE WORK-FUNCTION DIFFERENCE BETWEEN THE POLYSILICON GATE AND SILICON SUBSTRATE ON THE DOPING LEVEL IN POLYSILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 617 - 621

[7] LIU R, COMMUNICATION

[8] A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 137 - 149

[9] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1171 - 1176

[10] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[1] EFFECT OF IMPURITIES ON THE GRAIN-GROWTH OF CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON FILMS [J]. MATERIALS CHEMISTRY AND PHYSICS, 1983, 9 (1-3) : 235 - 245

[2] THEORY OF CONDUCTION IN POLYSILICON - DRIFT-DIFFUSION APPROACH IN CRYSTALLINE-AMORPHOUS-CRYSTALLINE SEMICONDUCTOR SYSTEM .1. SMALL-SIGNAL THEORY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 480 - 493

[3] KLEPPING.DD, 1971, SOLID STATE ELECTRON, V14, P407, DOI 10.1016/0038-1101(71)90191-2

[4] LEE DS, 1983, IEEE T ELECTRON DEV, V30, P626

[5] INFLUENCE OF A RESISTIVE SUBLAYER AT THE POLYSILICON SILICON DIOXIDE INTERFACE ON MOS PROPERTIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 833 - 836

[6] DEPENDENCE OF THE WORK-FUNCTION DIFFERENCE BETWEEN THE POLYSILICON GATE AND SILICON SUBSTRATE ON THE DOPING LEVEL IN POLYSILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 617 - 621

[7] LIU R, COMMUNICATION

[8] A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 137 - 149

[9] A MODEL FOR CONDUCTION IN POLYCRYSTALLINE SILICON - .2. COMPARISON OF THEORY AND EXPERIMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1171 - 1176

[10] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763