HIGH-POWER CONTINUOUS OPERATION OF LASER-DIODES AT 1064NM

被引：9

作者：

MURISON, RF ^{[1
]}

MOORE, AH ^{[1
]}

LEE, SR ^{[1
]}

HOLEHOUSE, N ^{[1
]}

DZURKO, KM ^{[1
]}

COCKERILL, TM ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,MICROELECTR LAB 127,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 21期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19911226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High power operation of strained-layer quantum well laser diodes at 1064 nm wavelength is described, with up to 5.25 W of continuous wave power achieved from a single 100-mu-m broad area stripe at room temperature before the onset of catastrophic facet damage. These devices also possess low threshold current and high power conversion efficiency.

引用

页码：1979 / 1981

页数：3

共 7 条

[1]

ADACHI S, 1989, DATAREVIEWS SERIES, V2, P513

[2] DEPENDENCE OF THRESHOLD CURRENT-DENSITY ON QUANTUM WELL COMPOSITION FOR STRAINED-LAYER INGAAS-GAAS LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].