CHARACTERIZATION OF VACANCY-TYPE DEFECTS IN SE-IMPLANTED GAAS BY MEANS OF A SLOW POSITRON BEAM

被引：3

作者：

FUJII, S ^{[1
]}

SHIKATA, S ^{[1
]}

WEI, L ^{[1
]}

TANIGAWA, S ^{[1
]}

机构：

[1] UNIV TSUKUBA, INST MAT SCI, TSUKUBA, IBARAKI 305, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 04期

关键词：

D O I：

10.1063/1.351753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Variable-energy (0-30 keV) positron beam studies have been carried out on 200 keV Se-implanted GaAs specimens before and after annealing for the electrical activation. From the measurements of Doppler broadened profiles of the positron annihilation as a function of the incident positron energy, it was found that vacancy clusters with high concentration were introduced especially in the annealed specimens after Se implantation. From the parallel measurement of electric characteristics, the higher activation efficiency was found to be obtained for the higher concentration of vacancy clusters. This fact implies that electrons supplied by the activation of Se also convert the charge state of As vacancies from positive to negative.

引用

页码：1405 / 1409

页数：5

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