POSITRON LIFETIME INVESTIGATIONS OF DIAMOND FILMS

被引:14
作者
DANNEFAER, S
BRETAGNON, T
KERR, D
机构
[1] Department of Physics, University of Winnipeg, Winnipeg
关键词
D O I
10.1016/0925-9635(93)90016-U
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Positron lifetime investigations on B-doped and undoped chemical vapor deposition diamond films have shown that B-doping at 500 ppm almost completely removes vacancies from the film. The 1.68 eV photo luminescence (PL) line is also removed. For undoped films, large concentrations (almost-equal-to 10(18) cm-3) of Vacancy clusters (approximately 6 vacancies) and mono- or divacancies are observed. Small observable effects arising. from annealing up to 1100-degrees-C could be found in both B-doped or undoped films. There is no correlation between the width of the 1.68 eV PL line and the vacancy concentration.
引用
收藏
页码:1479 / 1482
页数:4
相关论文
共 8 条
  • [1] THE 1.681 EV CENTER IN POLYCRYSTALLINE DIAMOND
    CLARK, CD
    DICKERSON, CB
    [J]. SURFACE & COATINGS TECHNOLOGY, 1991, 47 (1-3) : 336 - 343
  • [2] DEFECT CHARACTERIZATION IN DIAMONDS BY MEANS OF POSITRON-ANNIHILATION
    DANNEFAER, S
    MASCHER, P
    KERR, D
    [J]. DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) : 407 - 410
  • [3] DANNEFAER S, 1990, 1989 P INT C SCI TEC, P777
  • [4] DANNEFAER S, UNPUB
  • [5] RUAN J, 1991, MAT RES S C, P703
  • [6] VAVILOV VS, 1980, SOV PHYS SEMICOND+, V14, P1078
  • [7] EFFECTS OF BORON DOPING ON THE SURFACE-MORPHOLOGY AND STRUCTURAL IMPERFECTIONS OF DIAMOND FILMS
    WANG, XH
    MA, GHM
    WEI, Z
    GLASS, JT
    BERGMAN, L
    TURNER, KF
    NEMANICH, RJ
    [J]. DIAMOND AND RELATED MATERIALS, 1992, 1 (07) : 828 - 835
  • [8] Zaitsev A.M., 1981, SOV, V10, P15