LIGHT-BEAM-INDUCED TRANSIENT SPECTROSCOPY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON

被引：2

作者：

DAVIDSON, JA ^{[1
]}

EVANS, JH ^{[1
]}

PEAKER, AR ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 24卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(94)90320-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have applied the technique of light-beam-induced transient spectroscopy, which characterizes minority carrier capture and emission at point and extended defects, to oxidation-induced stacking faults in n-type silicon. We have compared the minority carrier trap data with conventional deep-level transient spectra for majority carrier traps. We find that we are able to distinguish between hole capture at randomly distributed point defects (e.g. Au), and hole capture at point defects which are associated with the extended-defect strain field.

引用

页码：167 / 169

页数：3

共 9 条

[1]

AMILTON B, 1979, J APPL PHYS, V50, P6373

[2] DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES - A REVIEW [J].

CAVALLINI, A ;

CASTALDINI, A .

JOURNAL DE PHYSIQUE IV, 1991, 1 (C6) :89-99

[3] INTERNAL GETTERING IN BIPOLAR PROCESS - EFFECT ON CIRCUIT PERFORMANCE AND RELATIONSHIP TO OXYGEN PRECIPITATION KINETICS [J].

JASTRZEBSKI, L ;

SOYDAN, R ;

GOLDSMITH, B ;

MCGINN, JT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2944-2953

[4]

KOLBESEN BO, 1989, I PHYS C SER, V104, P421

[5] THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON [J].

OURMAZD, A ;

WILSHAW, PR ;

BOOKER, GR .

PHYSICA B & C, 1983, 116 (1-3) :600-605

[6] ELECTRONIC BEHAVIOR OF DECORATED STACKING-FAULTS IN SILICON [J].

PEAKER, AR ;

HAMILTON, B ;

LAHIJI, GR ;

TURE, IE ;

LORIMER, G .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4) :123-128

[7]

QIAN Y, 1993, I PHYS C SER, V134, P121

[8] EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS [J].

WILSHAW, PR ;

FELL, TS ;

COTEAU, MD .

JOURNAL DE PHYSIQUE IV, 1991, 1 (C6) :3-14

[9] CAPTURE CROSS-SECTIONS OF THE GOLD DONOR AND ACCEPTOR STATES IN N-TYPE CZOCHRALSKI SILICON [J].

WU, RH ;

PEAKER, AR .

SOLID-STATE ELECTRONICS, 1982, 25 (07) :643-649

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