DIRECT OXINITRIDE SYNTHESIS BY MULTIPULSE EXCIMER LASER IRRADIATION OF SILICON-WAFERS IN A NITROGEN-CONTAINING AMBIENT ENVIRONMENT

被引：8

作者：

CRACIUN, V

MIHAILESCU, IN

ONCIOIU, G

LUCHES, A

MARTINO, M

NASSISI, V

RADIOTIS, E

DRIGO, AV

GANATSIOS, S

机构：

[1] INST NUCL ENERGET REACTORS,PITESTI,ROMANIA

[2] UNIV LECCE,DEPT PHYS,I-73100 LECCE,ITALY

[3] UNIV LECCE,DEPT MAT SCI,I-73100 LECCE,ITALY

[4] TECHNOL & EDUC INST KOZANI,KOZANI,GREECE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The direct synthesis of silicon oxinitride films by multipulse excimer (λ=308 nm) laser irradiation in a nitrogen-containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics.

引用

页码：2509 / 2511

页数：3

共 16 条

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