PROPERTIES OF FLUORINATED SILICON-NITRIDE FILMS FOR APPLICATIONS TO DEVICE PROCESSES

被引：15

作者：

FUJITA, S

SASAKI, A

机构：

来源：

关键词：

D O I：

10.1149/1.2095381

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2566 / 2571

页数：6

共 18 条

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FUJITA, S
OHISHI, T
TOYOSHIMA, H
SASAKI, A
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 426 - 431
[3] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF FLUORINATED SILICON-NITRIDE
FUJITA, S
TOYOSHIMA, H
OHISHI, T
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L144 - L146
[4] FUJITA S, 1984, JPN J APPL PHYS 2, V23, pL268, DOI 10.1143/JJAP.23.L268
[5] DANGLING BONDS IN MEMORY-QUALITY SILICON-NITRIDE FILMS
FUJITA, S
SASAKI, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) : 398 - 402
[6] Fujita S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P630
[7] FUJITA S, 1985, IEDM TECH DIG, P64
[8] FUJITA S, 1984, INT PHOTOVOLTAIC SCI
[9] Ishii Y., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P1357
[10] HYDROGEN-RELATED MEMORY TRAPS IN THIN SILICON-NITRIDE FILMS
KAPOOR, VJ
BAILEY, RS
STEIN, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 600 - 607