LOW THRESHOLD CURRENT, HIGH OUTPUT POWER BURIED HETEROSTRUCTURE MQW LASERS WITH STRAINED INGAASP WELLS

被引：12

作者：

SELTZER, CP

PERRIN, SD

SPURDENS, PC

机构：

[1] BT Laboratories, Martlesham Heath, Ipswich

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 19期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19921160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Buried heterostructure lasers with 4, 8 and 16 compressively strained InGaAsP quantum wells have been fabricated. A record low threshold current of 3-1 mA has been obtained and thresholds for all devices are lower than for lasers with wells of compressively strained or lattice-matched InxGa1-xAs. High output powers of over 60 mW per facet have been measured.

引用

页码：1819 / 1821

页数：3

共 8 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].