DENSITIES OF AMORPHOUS SI FILMS BY NUCLEAR BACKSCATTERING

[21] Paul W., 1972, J NONCRYSTALLINE SOL, V8-10, P381, DOI [10.1016/0022-3093(72)90164-0, DOI 10.1016/0022-3093(72)90164-0]

[22] Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X

[23] STRUCTURE OF AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1972, 25 (04): : 1001 - &

[24] RUDEE ML, TO BE PUBLISHED

[25] RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (11) : 642 - &

[26] ELASTIC AND ANELASTIC BEHAVIOR OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 88 - &

[27] TU KM, UNPUBLISHED

[28] DETERMINATION OF SURFACE IMPURITY CONCENTRATION PROFILES BY NUCLEAR BACKSCATTERING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2031 - &

[21] Paul W., 1972, J NONCRYSTALLINE SOL, V8-10, P381, DOI [10.1016/0022-3093(72)90164-0, DOI 10.1016/0022-3093(72)90164-0]

[22] Polk D. E., 1971, Journal of Non-Crystalline Solids, V5, P365, DOI 10.1016/0022-3093(71)90038-X

[23] STRUCTURE OF AMORPHOUS SI AND GE [J]. PHILOSOPHICAL MAGAZINE, 1972, 25 (04): : 1001 - &

[24] RUDEE ML, TO BE PUBLISHED

[25] RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (11) : 642 - &

[26] ELASTIC AND ANELASTIC BEHAVIOR OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (02) : 88 - &

[27] TU KM, UNPUBLISHED

[28] DETERMINATION OF SURFACE IMPURITY CONCENTRATION PROFILES BY NUCLEAR BACKSCATTERING [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2031 - &