LOCAL INTERFACE COMPOSITION AND BAND DISCONTINUITIES IN HETEROVALENT HETEROSTRUCTURES

被引：136

作者：

NICOLINI, R

VANZETTI, L

MULA, G

BRATINA, G

SORBA, L

FRANCIOSI, A

PERESSI, M

BARONI, S

RESTA, R

BALDERESCHI, A

ANGELO, JE

GERBERICH, WW

机构：

[1] CONSORZIO INTERUNIV FIS MAT,TECNOL AVANZATE SUPERFICI & CATALISI LAB,AREA RIC,PADRICIANO 99,I-34012 TRIESTE,ITALY

[2] CNR,IST ACUSTICA OM CORBINO,I-00189 ROME,ITALY

[3] UNIV CAGLIARI,DIPARTIMENTO SCI FIS,I-09100 CAGLIARI,ITALY

[4] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

[5] UNIV TRIESTE,DIPARTIMENTO FIS TEOR,I-34014 TRIESTE,ITALY

[6] SCUOLA INT SUPER STUDI AVANZATI,I-34014 TRIESTE,ITALY

[7] PHB ECUBLENS,INST ROMAND RECH NUMER & PHYS MAT,CH-1015 LAUSANNE,SWITZERLAND

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.72.294

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.

引用

页码：294 / 297

页数：4

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