MEASUREMENT OF DOPING PROFILES IN THICK EPITAXIAL LAYERS OF GAP USING SCHOTTKY BARRIER C-V DATA

被引：17

作者：

PEAKER, AR

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 10期

关键词：

D O I：

10.1016/0038-1101(70)90174-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1407 / &

共 17 条

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[8]

MOTTRAM J, TO BE PUBLISHED

[9] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].

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SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&

[10] EFFICIENCY PEAKING IN RED-LIGHT-EMITTING GALLIUM-PHOSPHIDE DIODES [J].

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