COMPARATIVE-STUDY OF SILICON-NITRIDE ENCAPSULATED AND PHOSPHINE OVERPRESSURE ANNEALING ON THE INTERDIFFUSION OF INXGA1-XAS-INXGA1-XASYP1-Y HETEROSTRUCTURES

被引：7

作者：

GILLIN, WP ^{[1
]}

PERRIN, SD ^{[1
]}

HOMEWOOD, KP ^{[1
]}

机构：

[1] BT LABS, IPSWICH IP5 7RE, SUFFOLK, ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.358893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal interdiffusion on the group-V sublattice in In xGa1-xAs-InxGa1-xAs yP1-y quantum-well structures has been characterized for samples annealed either with silicon nitride encapsulation or under a phosphine overpressure in two different metalorganic vapor-phase-epitaxy reactors under different phosphine overpressures. Under all conditions the interdiffusion lengths were found to be comparable, with only small effects due to the phosphine overpressure. This suggests that interdiffusion results obtained from silicon nitride capped samples can be applied to the interdiffusion that occurs during growth conditions. © 1995 American Institute of Physics.

引用

页码：1463 / 1465

页数：3

共 9 条

[1] THE EFFECTS OF ION-IMPLANTATION ON THE INTERDIFFUSION COEFFICIENTS IN INXGA1-XAS/GAAS QUANTUM-WELL STRUCTURES [J].

BRADLEY, IV ;

GILLIN, WP ;

HOMEWOOD, KP ;

WEBB, RP .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) :1686-1692

[2] INTERDIFFUSION IN INGAAS/GAAS QUANTUM-WELL STRUCTURES AS A FUNCTION OF DEPTH [J].

GILLIN, WP ;

DUNSTAN, DJ ;

HOMEWOOD, KP ;

HOWARD, LK ;

SEALY, BJ .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (08) :3782-3786

[3] VACANCY CONTROLLED INTERDIFFUSION OF THE GROUP-V SUBLATTICE IN STRAINED INGAAS/INGAASP QUANTUM-WELLS [J].

GILLIN, WP ;

RAO, SS ;

BRADLEY, IV ;

HOMEWOOD, KP ;

SMITH, AD ;

BRIGGS, ATR .

APPLIED PHYSICS LETTERS, 1993, 63 (06) :797-799

[4]

GILLIN WP, UNPUB

[5]

GLEW RW, 1993, FIFTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P29

[6]

GLEW RW, 1991, INDIUM PHOSPHIDE AND RELATED MATERIALS : THIRD INTERNATIONAL CONFERENCE, VOLS 1 AND 2, P515, DOI 10.1109/ICIPRM.1991.147426

[7] HETEROJUNCTION BAND OFFSETS AND EFFECTIVE MASSES IN III-V QUATERNARY ALLOYS [J].

KRIJN, MPCM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (01) :27-31

[8] INTERDIFFUSION OF THE GROUP-III SUBLATTICE IN IN-GA-AS-P IN-GA-AS-P AND IN-GA-AS IN-GA-AS HETEROSTRUCTURES [J].

RAO, SS ;

GILLIN, WP ;

HOMEWOOD, KP .

PHYSICAL REVIEW B, 1994, 50 (11) :8071-8073

[9] BAND LINEUPS AND DEFORMATION POTENTIALS IN THE MODEL-SOLID THEORY [J].

VAN DE WALLE, CG .

PHYSICAL REVIEW B, 1989, 39 (03) :1871-1883

← 1 →