LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .2. PHOTOREFLECTANCE AND ELECTROREFLECTANCE OF N-SI

被引:19
作者
SHEN, WM [1 ]
FANTINI, MCA [1 ]
TOMKIEWICZ, M [1 ]
GAMBINO, JP [1 ]
机构
[1] IBM CORP, HOPEWELL JUNCTION, NY 12533 USA
关键词
D O I
10.1063/1.344492
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1759 / 1764
页数:6
相关论文
共 17 条
[1]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[2]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[3]   PHOTOREFLECTANCE AND ELECTROREFLECTANCE IN SILICON [J].
CERDEIRA, F ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1969, 7 (12) :879-&
[4]   HYDROGEN PASSIVATION OF DISLOCATIONS IN SILICON [J].
DIVIGALPITIYA, WMR ;
MORRISON, SR ;
VERCRUYSSE, G ;
PRAET, A ;
GOMES, WP .
SOLAR ENERGY MATERIALS, 1987, 15 (02) :141-151
[5]   LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .1. THE POTENTIAL DISTRIBUTION AT THE SI METHANOL INTERFACE [J].
FANTINI, MCA ;
SHEN, WM ;
TOMKIEWICZ, M ;
GAMBINO, JP .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :4884-4890
[6]   LINE-SHAPE OF THE OPTICAL DIELECTRIC FUNCTION [J].
GARLAND, JW ;
ABAD, H ;
VICCARO, M ;
RACCAH, PM .
APPLIED PHYSICS LETTERS, 1988, 52 (14) :1176-1178
[7]   TEMPERATURE-DEPENDENCE OF PHOTOREFLECTANCE IN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS [J].
GLEMBOCKI, OJ ;
SHANABROOK, BV ;
BEARD, WT .
SURFACE SCIENCE, 1986, 174 (1-3) :206-210
[8]  
GLOSSER R, 1987, SPIE BELLINGHAM, V794, P88
[9]   SYMMETRY ANALYSIS OF E2 STRUCTURES IN SI BY LOW-FIELD ELECTROREFLECTANCE [J].
KONDO, K ;
MORITANI, A .
PHYSICAL REVIEW B, 1977, 15 (02) :812-815
[10]   SYMMETRY ANALYSIS AND UNIAXIAL-STRESS EFFECT ON LOW-FIELD ELECTROREFLECTANCE OF SI FROM 3.0 TO 4.0 EV [J].
KONDO, K ;
MORITANI, A .
PHYSICAL REVIEW B, 1976, 14 (04) :1577-1592