HYDROGEN PASSIVATION OF DISLOCATIONS IN SILICON

被引：13

作者：

DIVIGALPITIYA, WMR ^{[1
]}

MORRISON, SR ^{[1
]}

VERCRUYSSE, G ^{[1
]}

PRAET, A ^{[1
]}

GOMES, WP ^{[1
]}

机构：

[1] STATE UNIV GHENT,FYS SCHEIKUNDE LAB,B-9000 GHENT,BELGIUM

来源：

SOLAR ENERGY MATERIALS | 1987年 / 15卷 / 02期

关键词：

D O I：

10.1016/0165-1633(87)90089-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：141 / 151

页数：11

共 20 条

[1] EFFECT OF DISLOCATIONS IN METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS [J].

DIVIGALPITIYA, WMR ;

MORRISON, SR .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :406-412

[2]

GERISCHER H, 1973, BER BUNSEN PHYS CHEM, V77, P284

[3] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS [J].

HANOKA, JI ;

SEAGER, CH ;

SHARP, DJ ;

PANITZ, JKG .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :618-620

[4]

HOVEL HJ, 1973, 10TH P IEEE PHOT SPE, P34

[5]

JAMES CE, 1965, J ELECTROCHEM SOC, V112, P908

[6] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

PHYSICAL REVIEW B, 1985, 31 (08) :5525-5528

[7] HYDROGENATION AND DEHYDROGENATION OF AMORPHOUS AND CRYSTALLINE SILICON [J].

PANKOVE, JI ;

LAMPERT, MA ;

TARNG, ML .

APPLIED PHYSICS LETTERS, 1978, 32 (07) :439-441

[8] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

[9] HYDROGEN PASSIVATION OF DEFECTS IN DEFORMED SILICON [J].

POHORYLES, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (01) :K75-K80

[10] HYDROGENATION STUDIES OF DEFORMED N-SI [J].

POHORYLES, B .

JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :359-362

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