FABRICATION OF MESA-TYPE WAVEGUIDES IN ALGAAS STRUCTURES BY LASER IRRADIATION

被引：2

作者：

SALATHE, RP

GILGEN, HH

RYTZFROIDEVAUX, Y

LUTHY, W

WEBER, HP

机构：

[1] Institute of Applied Physics, University of Berne, CH-3012 Berne

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Passive three-dimensional light guides have been generated by exposing small areas of AlxGa1-xAs heterostructure material to cw argon laser radiation and subsequent removal of the irradiated zones by selective etching. Mesa-type waveguides with a width of 2.5 μm and a lateral definition of better than 0.3 μm have been produced. The luminescence emitted by the samples during the irradiation has been monitored to investigate the dynamics of processing.

引用

页码：543 / 545

页数：3

共 13 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J].