ON THE PERIOD OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING SI MOLECULAR-BEAM EPITAXY ON VICINAL SI(001)

被引：20

作者：

ZANDVLIET, HJW

ELSWIJK, HB

DIJKKAMP, D

VANLOENEN, EJ

DIELEMAN, J

机构：

[1] Philips Research Laboratories, 5600 JA Eindhoven

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.349372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of reflection high-energy electron diffraction intensity oscillations with a period different from an integer number of atomic layers. These oscillations, which arise from the periodic nucleation, growth, and coalescence of two-dimensional islands, are recorded during Si molecular-beam epitaxial (MBE) growth on vicinal Si(001) at growth conditions near step flow. We explain the deviation of the period from an integer number of atomic layers by the diffusive loss of Si atoms from the terraces where the islands grow to the surface steps. This explanation will be elucidated by comparison with Monte Carlo computer simulations of Si MBE.

引用

页码：2614 / 2617

页数：4

共 22 条

[1]

AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662

[2]

AARTS J, 1988, RHEED REFLECTION ELE, P449

[3] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].