REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND SCANNING TUNNELING MICROSCOPY STUDY OF SINGLE-DOMAIN GROWTH DURING SILICON MOLECULAR-BEAM EPITAXY ON SI(001)

被引：27

作者：

HOEVEN, AJ

VANLOENEN, EJ

DIJKKAMP, D

LENSSINCK, JM

DIELEMAN, J

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(89)90451-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：263 / 271

页数：9

共 15 条

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[7] SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN SI(001) SURFACES GROWN BY MOLECULAR-BEAM EPITAXY
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[8] HOEVEN AJ, IN PRESS J VAC SCI A
[9] A REAL SPACE INVESTIGATION OF THE DIMER DEFECT STRUCTURE OF SI(001)-(2X8)
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