TUNGSTEN DEPOSITION BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION WITH ORGANOTUNGSTEN PRECURSORS

被引：11

作者：

SPEE, CIMA

VERBEEK, F

KRAAIJKAMP, JG

LINDEN, JL

RUTTEN, T

DELHAYE, H

VANDERZOUWEN, EA

MEINEMA, HA

机构：

[1] TNO Plastics and Rubber Research Institute, Zeist Branch, 3700 AC Zeist

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 17卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90090-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tungsten films are deposited by metal-organic chemical vapour deposition in a vertical hot-wall thermobalance reactor and a cold-wall stagnant flow reactor from Cp2WH2 (Cp=cyclopentadienyl) and CpW(CO)3CH3. Vapour pressure measurements show low volatilities: 13 mTorr for Cp2WH2 and 89 mTorr for CpW(CO)3CH3 at 75-degrees-C. Measurements of growth rate vs. reciprocal substrate temperatures reveal a kinetically limited deposition up to relatively high temperatures (400-500-degrees-C), with low growth rates. At 400-degrees-C, growth rates are approximately 5 mn h-1 with Cp2WH2 and approximately 0.16 mum h-1 using CpW(CO)3CH3. The tungsten layers contain 5-15at.% C and 5-10at.% O.

引用

页码：108 / 111

页数：4

共 13 条

[1] CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN BY H2 REDUCTION OF WCL6 [J].