NUCLEAR RADIATION RESPONSE OF INTEL 64K-BIT AND 128K-BIT HMOS ULTRAVIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORIES (UVEPROMS)

被引:2
作者
RENSNER, GD
ECKHARDT, DA
PAGE, M
机构
[1] BDM CORP,ALBUQUERQUE,NM 87106
[2] USN,ELECTR SYST COMMAND,PORTSMOUTH,VA 23705
关键词
D O I
10.1109/TNS.1985.4334068
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4056 / 4060
页数:5
相关论文
共 11 条
[1]   FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE [J].
FROHMANB.D .
SOLID-STATE ELECTRONICS, 1974, 17 (06) :517-&
[2]   AN ERASE MODEL FOR FAMOS EPROM DEVICES [J].
KATZNELSON, RD ;
FROHMANBENTCHKOWSKY, D .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) :1744-1752
[3]   ERASE MODEL IN DOUBLE POLY-SI GATE N-CHANNEL FAMOS DEVICES [J].
KONDO, R ;
TAKEDA, E ;
HAGIWARA, T ;
HORIUCHI, M ;
ITOH, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) :369-374
[4]  
LONG DM, 1980, IEEE T NUCL SCI, V27, P1674
[5]   UV EPROM ERASURE IN FLASH X-RAY AND CO-60 TOTAL DOSE ENVIRONMENTS [J].
MYERS, DK .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4038-4040
[6]  
OLSON J, 1982, AFWLTR8228
[7]  
ROSE MA, 1984, JUL IEEE NUCL SPAC R
[8]  
Rudie N.J., 1976, PRINCIPLES TECHNIQUE
[9]  
VANBUSKIRK M, 1983, ELECTRONICS 0224, P89
[10]   RADIATION RESPONSE OF 64K-BIT AND 128K-BIT ULTRAVIOLET ERASABLE PROGRAMMABLE READ ONLY MEMORIES (UVEPROMS) [J].
YUE, H ;
JENNINGS, R ;
GRAY, R ;
VOLMERANGE, H ;
WITTELES, A .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4282-4284