NITROGEN DOPING INTO GAAS1-XPX USING IONIZED BEAM IN MOLECULAR-BEAM EPITAXY

被引：7

作者：

MATSUSHIMA, Y

GONDA, SI

MAKITA, Y

MUKAI, S

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 43卷 / 03期

关键词：

D O I：

10.1016/0022-0248(78)90384-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：281 / 286

页数：6

共 14 条

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[8] OBSERVATION OF UPPER BRANCH (N'-GAMMA) OF NITROGEN ISOELECTRONIC TRAP IN GAAS1-YPY [J].

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[9] CRYSTAL SYNTHESIS, ELECTRICAL PROPERTIES, AND SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE OF IN1-XGAXP-N GROWN FROM SOLUTION [J].

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[10]

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