ENERGY-LEVELS OF NITROGEN ISOELECTRONIC IMPURITIES IN ALXGA1-XAS

被引：9

作者：

GONDA, S ^{[1
]}

MAKITA, Y ^{[1
]}

MUKAI, S ^{[1
]}

TSURUSHIMA, T ^{[1
]}

TANOUE, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 03期

关键词：

D O I：

10.1063/1.89023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：196 / 197

页数：2

共 8 条

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APPLIED PHYSICS LETTERS, 1975, 27 (02) :69-71

[2]

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[3] NEW LUMINESCENCE LINE DUE TO NITROGEN IMPLANTED INTO ALXGA1-XAS(X=0.37) [J].

GONDA, S ;

MAKITA, Y .

APPLIED PHYSICS LETTERS, 1975, 27 (07) :392-394

[4] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N [J].

HOLONYAK, N ;

DUPUIS, RD ;

MACKSEY, HM ;

GROVES, WO ;

CRAFORD, MG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4148-&

[5] COMPOSITION-RATIO DEPENDENCE OF FORMATION OF BOUND-STATES IN NITROGEN-IMPLANTED ALXGA1-XAS [J].

MAKITA, Y ;

LJUIN, H ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :287-289

[6] ENHANCEMENT OF EMISSION INTENSITY IN INDIRECT-GAP ALXGA1-XAS (X=0.53) BY NITROGEN-ION IMPLANTATION [J].

MAKITA, Y ;

GONDA, SI ;

IJUIN, H ;

TSURUSHIMA, T ;

TANOUE, H ;

MAEKAWA, S .

APPLIED PHYSICS LETTERS, 1976, 28 (02) :103-105

[7]

ONTON A, 1971, B AM PHYS SOC, V16, P371

[8]

TSU R, 1972, 11TH P INT C PHYS SE, P1135

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