SPUTTERING YIELDS OF SI AND NI FROM THE NI1-XSIX SYSTEM STUDIED BY RUTHERFORD BACKSCATTERING SPECTROMETRY

被引：4

作者：

KIM, SC

YAMAGUCHI, S

KATAOKA, Y

IWAMI, M

HIRAKI, A

SATOU, M

FUJIMOTO, F

机构：

[1] GOVT IND RES INST,IKEDA,OSAKA 563,JAPAN

[2] UNIV TOKYO,COLL GEN EDUC,KOMABA,TOKYO 153,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1143/JJAP.21.39

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：39 / 41

页数：3

共 9 条

[1]

Chu WK., 1978, BACKSCATTERING SPECT

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[4]

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[5] ELECTRONIC STATES OF SILICON IN NI-SILICIDES BY NUCLEAR MAGNETIC-RESONANCE [J].

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[6] SPUTTERING OF PTSI AND NISI [J].

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VANDERWEG, WF .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :345-349

[7]

SHIMIZU R, 1978, SURF SCI, V71, P479

[8] SPUTTERING OF AN AGAU ALLOY BY BOMBARDMENT WITH 6 KEV XE+ IONS [J].

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[9]

TU KN, 1978, THIN FILMS INTERDIFF, pCH10

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