SIMPLE-MODEL FOR FREQUENCY-MODULATION CHARACTERISTICS OF SEMICONDUCTOR-LASERS

被引：6

作者：

CARVALHO, MC

SEEDS, AJ

机构：

[1] Univ Coll London, United Kingdom

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 07期

关键词：

Lasers; Semiconductor - Optical Communication;

D O I：

10.1049/el:19880290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A simple model is presented for the frequency deviation or chirp caused by modulation-induced variations in the carrier density in the active region of a semiconductor laser. Predictions from this model are compared with experimental measurements of sinusoidal frequency modulation in the range 0.8 to 3.0 GHz and show good agreement.

引用

页码：428 / 429

页数：2

共 6 条

[1] DIRECT FREQUENCY-MODULATION IN ALGAAS SEMICONDUCTOR-LASERS
KOBAYASHI, S
YAMAMOTO, Y
ITO, M
KIMURA, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (04) : 582 - 595
[2] TRANSIENT CHIRPING IN SINGLE-FREQUENCY LASERS - LIGHTWAVE SYSTEMS CONSEQUENCES
LINKE, RA
[J]. ELECTRONICS LETTERS, 1984, 20 (11) : 472 - 474
[3] HETERODYNE AND COHERENT OPTICAL FIBER COMMUNICATIONS - RECENT PROGRESS
OKOSHI, T
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (08) : 1138 - 1149
[4] HIGH-RATE AMPLITUDE AND FREQUENCY-MODULATION OF SEMICONDUCTOR-LASERS
SEEDS, AJ
FORREST, JR
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06): : 275 - 282
[5] Thompson G. H. B., 1972, Opto-Electronics, V4, P257, DOI 10.1007/BF02334396
[6] HIGH-FREQUENCY CHARACTERISTICS OF DIRECTLY MODULATED INGAASP RIDGE WAVE-GUIDE AND BURIED HETEROSTRUCTURE LASERS
TUCKER, RS
KAMINOW, IP
[J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (04) : 385 - 393

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