GROWTH AND CHARACTERIZATION OF ZNTE FILMS GROWN ON GAAS, INAS, GASB, AND ZNTE

被引：44

作者：

RAJAKARUNANAYAKE, Y ^{[1
]}

COLE, BH ^{[1
]}

MCCALDIN, JO ^{[1
]}

CHOW, DH ^{[1
]}

SODERSTROM, JR ^{[1
]}

MCGILL, TC ^{[1
]}

JONES, CM ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 12期

关键词：

D O I：

10.1063/1.101659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1217 / 1219

页数：3

共 13 条

[1]

BITTEBIERRE J, 1986, PHYS REV B, V34, P2360, DOI 10.1103/PhysRevB.34.2360

[2] NATURE OF PREDOMINANT ACCEPTORS IN HIGH-QUALITY ZINC TELLURIDE [J].

DEAN, PJ ;

VENGHAUS, H ;

PFISTER, JC ;

SCHAUB, B ;

MARINE, J .

JOURNAL OF LUMINESCENCE, 1978, 16 (04) :363-394

[3]

DEAN PJ, 1980, CZECH J PHYS B, V30, P273

[4] ZEEMAN SPECTROSCOPY OF EXCITON BOUND TO TRIGONAL ACCEPTOR CENTER IN ZNTE [J].

DESSUS, JL ;

DANG, LS ;

NAHMANI, A ;

ROMESTAIN, R .

SOLID STATE COMMUNICATIONS, 1981, 37 (09) :689-692

[5] EFFECTS OF ZN TO TE RATIO ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE ON GAAS [J].

FELDMAN, RD ;

AUSTIN, RF ;

BRIDENBAUGH, PM ;

JOHNSON, AM ;

SIMPSON, WM ;

WILSON, BA ;

BONNER, CE .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1191-1195

[6]

GUNSHOR RL, 1988, UNPUB P NATO ADV RES

[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNTE AND ZNSE [J].

KITAGAWA, F ;

MISHIMA, T ;

TAKAHASHI, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) :937-943

[8] OPTICAL-IDENTIFICATION OF SUBSTITUTIONAL ACCEPTORS IN REFINED ZNTE [J].

MAGNEA, N ;

BENSAHEL, D ;

PAUTRAT, JL ;

PFISTER, JC .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1979, 94 (02) :627-639

[9]

NAHORY RE, 1967, PHYS REV, V156, P3

[10] DONORS AND ACCEPTORS IN TELLURIUM COMPOUNDS - THE PROBLEM OF DOPING AND SELF-COMPENSATION [J].

PAUTRAT, JL ;

FRANCOU, JM ;

MAGNEA, N ;

MOLVA, E ;

SAMINADAYAR, K .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :194-204

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