LOW-TEMPERATURE SILICON-TO-SILICON ANODIC BONDING WITH INTERMEDIATE LOW MELTING-POINT GLASS

被引：18

作者：

ESASHI, M

NAKANO, A

SHOJI, S

HEBIGUCHI, H

机构：

[1] Department of Electronic Engineering, Tohoku University, Sendai, 980, Aza Aoba, Aramaki, Aoba ku

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 23卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)87062-N

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems. © 1990.

引用

页码：931 / 934

页数：4

共 5 条

[1] ANODIC BONDING OF IMPERFECT SURFACES [J].