INFRARED-PLASMA-REFLECTION IN P-TYPE GAAS

被引：6

作者：

RHEINLANDER, B ^{[1
]}

机构：

[1] KARL MARX UNIV, SEKT PHYS, LEIPZIG 701, EAST GERMANY

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1973年 / 55卷 / 01期

关键词：

D O I：

10.1002/pssb.2220550168

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K69 / K74

页数：6

共 16 条

[1]

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[2]

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PHYSICA STATUS SOLIDI, 1966, 13 (02) :K119-&

[4]

LYDEN HA, 1964, PHYS REV, V134, P1106

[5]

MADELUNG O, 1964, PHYSICS 3 5 COMPOUND, P87

[6]

MOSS TS, 1969, J PHYS C, V2, P1435

[7] INFRARED REFLECTIVITY OF HEAVILY DOPED LOW-MOBILITY SEMICONDUCTORS .I. GAAS [J].

MURRAY, LA ;

RIVERA, JJ ;

HOSS, PA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4743-&

[8] EFFECT OF ENERGY DISTRIBUTION IN SEMICONDUCTOR CHARGE-CARRIERS ON EFFECTIVE MASS DETERMINATION FROM INFRARED PLASMA REFLECTION [J].

RHEINLANDER, B .

PHYSICS LETTERS A, 1969, A 29 (07) :420-+

[9] HOLE EFFECTIVE MASSES IN HIGHLY DOPED CDSB DETERMINED FROM INFRARED-PLASMA-REFLECTIVITY MEASUREMENTS [J].

RHEINLANDER, B .

PHYSICA STATUS SOLIDI, 1970, 38 (01) :193-+

[10] INFRARED REFLECTION OF HEAVILY DOPED P-TYPE GALLIUM ARSENIDE [J].

RICCIUS, HD ;

BERTIE, JE .

CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) :1665-&

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