ANISOTROPY INVESTIGATIONS AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SILICON

被引：17

作者：

BASMAJI, P ^{[1
]}

SURDUTOVICH, G ^{[1
]}

VITLINA, R ^{[1
]}

KOLENDA, J ^{[1
]}

BAGNATO, VS ^{[1
]}

MOHAJERIMOGHADDAM, H ^{[1
]}

PEYGHAMBARIAN, N ^{[1
]}

机构：

[1] OPT SCI CTR,TUCSON,AZ 85721

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 08期

基金：

巴西圣保罗研究基金会; 美国国家科学基金会;

关键词：

D O I：

10.1016/0038-1098(94)90565-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Porous silicon layers have been investigated using reflectance and photoluminescence techniques at room and liquid nitrogen temperatures. We observe a noticeable anisotropy of porous silicon samples. The measured parallel and normal components of the refractive index for samples with moderate porosity were 1.25 and 1.30, respectively. Possible mechanisms for the origin of the photoluminescence are discussed.

引用

页码：649 / 653

页数：5

共 22 条

[1]

BASMAJI P, 1993, THIN SOLID FILMS, V223, P131

[2] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].