A QUANTITATIVE MODEL FOR THE CONDUCTION IN OXIDES THERMALLY GROWN FROM POLYCRYSTALLINE SILICON

被引：25

作者：

GROESENEKEN, G

MAES, HE

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 07期

关键词：

D O I：

10.1109/T-ED.1986.22609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1028 / 1042

页数：15

共 19 条

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J].

ANDERSON, RM ;

KERR, DR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4834-4836

[2]

CONTI M, 1980, IOP C SER, V50, P55

[3]

DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[4] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J].

DIMARIA, DJ ;

KERR, DR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :505-507

[5] USE OF ELECTRON-TRAPPING REGION TO REDUCE LEAKAGE CURRENTS AND IMPROVE BREAKDOWN CHARACTERISTICS OF MOS STRUCTURES [J].

DIMARIA, DJ ;

YOUNG, DR ;

ORMOND, DW .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :680-682

[6]

DRORI J, 1981, IEEE INT SOLID STATE, P148

[7]

Ellis R. K., 1982, International Electron Devices Meeting. Technical Digest, P749

[8] FOWLER-NORDHEIM EMISSION FROM NONPLANAR SURFACES [J].

ELLIS, RK .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :330-332

[9] ELECTRICAL-CONDUCTION AND BREAKDOWN IN OXIDES OF POLYCRYSTALLINE SILICON AND THEIR CORRELATION WITH INTERFACE TEXTURE [J].

HEIMANN, PA ;

MURARKA, SP ;

SHENG, TT .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6240-6245

[10] ELECTRICAL-CONDUCTION THROUGH POLYSILICON OXIDE - INTERFACE TEXTURE VS ISOLATED PROTUBERANCES [J].

HEIMANN, PA ;

LIN, PSD ;

SHENG, TT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) :2117-2119

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