DETERMINATION OF BAND DISCONTINUITY IN AMORPHOUS-SILICON HETEROJUNCTIONS

被引：17

作者：

HAYASHI, T ^{[1
]}

MIYAZAKI, S ^{[1
]}

HIROSE, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV,DEPT ELECT ENGN,HIROSHIMA 724,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 03期

关键词：

D O I：

10.1143/JJAP.27.L314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L314 / L316

页数：3

共 12 条

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[2] STUDY OF THE BAND DISCONTINUITIES AT THE A-SIH/C-SI INTERFACE BY INTERNAL PHOTOEMISSION [J].

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[3]

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[4] PHOTOEMISSION-STUDIES OF A-SIXC1-X-H/A-SI AND A-SIXC1-X-H/HYDROGENATED AMORPHOUS-SILICON HETEROJUNCTIONS [J].

EVANGELISTI, F ;

FIORINI, P ;

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[5]

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[6]

HIROSE M, 1986, MATERIALS RES SOC S, V70, P405

[7] ELECTRONIC-STRUCTURE OF SILICON-NITRIDE AND AMORPHOUS-SILICON SILICON-NITRIDE BAND OFFSETS BY ELECTRON-SPECTROSCOPY [J].

IQBAL, A ;

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ALLEN, JW ;

BATES, CW .

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[8]

MIYAZAKI S, 1985, 17 SSDM, P107

[9]

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[10]

TARUI H, 1986, 6TH INT C SOL STAT D, P687

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