PHOTON LOSS IN ACTIVE AND PASSIVE REGIONS OF A SEMICONDUCTOR LASER

被引：20

作者：

HUNSPERGER, R

机构：

[1] Cornell University, Ithaca, NY

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 04期

关键词：

D O I：

10.1016/0038-1101(69)90002-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The photon loss in the active and passive regions of an electron-beam-pumped GaAs laser has been measured by masking a portion of the length between Fabry-Perot surfaces. A theoretical expression for threshold has been developed, and experimental measurement of threshold current density as a function of masked length has been made for several different n and p-doped samples of GaAs at 4°K. The loss coefficients have been found to be strongly dependent on impurity doping concentration. The loss coefficient in the active region has been observed to be less than the loss coefficient in passive material. This is attributed to an inhibiting of interband absorptive transitions by the inverted population in the active region. © 1969.

引用

页码：215 / +

页数：1

共 22 条

[1] EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GAAS [J].