DIRECT EVIDENCE FOR 1NM PORES IN DRY THERMAL SIO2 FROM HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY

被引：79

作者：

GIBSON, JM ^{[1
]}

DONG, DW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 12期

关键词：

D O I：

10.1149/1.2129579

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2722 / 2728

页数：7

相关论文

共 34 条

[21] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF AMORPHOUS THIN-FILMS
HOWIE, A
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 31 (1-2) : 41 - 55
[22] EFFECTS OF TRACE AMOUNTS OF WATER ON THERMAL OXIDATION OF SILICON IN OXYGEN
IRENE, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1613 - 1616
[23] SILICON OXIDATION STUDIES - ANALYSIS OF SIO2 FILM GROWTH DATA
IRENE, EA
VANDERMEULEN, YJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (09) : 1380 - 1384
[24] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME
IRENE, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714
[25] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF SI-SIO2 INTERFACE
KRIVANEK, OL
SHENG, TT
TSUI, DC
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 437 - 439
[26] LENZ F, 1971, ELECTRON MICROS, P540
[27] N-BEAM LATTICE IMAGES .5. USE OF CHARGE-DENSITY APPROXIMATION IN INTERPRETATION OF LATTICE IMAGES
LYNCH, DF
MOODIE, AF
OKEEFE, MA
[J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1975, A 31 (MAY1): : 300 - &
[28] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS
NICOLLIA.EH
BERGLUND, CN
SCHMIDT, PF
ANDREWS, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &
[29] RHULE MR, 1972, RAD INDUCED VOIDS ME, P255
[30] THE THEORETICAL RESOLUTION LIMIT OF THE ELECTRON MICROSCOPE
SCHERZER, O
[J]. JOURNAL OF APPLIED PHYSICS, 1949, 20 (01) : 20 - 29

← 1 2 3 4 →