NEUTRON-INDUCED LATCH-UP IMMUNITY IN METAL GATE CMOS INTEGRATED-CIRCUITS

被引：5

作者：

BARNES, CE ^{[1
]}

ROLLINS, JG ^{[1
]}

HACHEY, D ^{[1
]}

机构：

[1] GE,CTR SPACE,KING OF PRUSSIA,PA 19406

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1769 / 1774

页数：6

共 11 条

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[8] LATCH-UP IN CMOS INTEGRATED-CIRCUITS [J].

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[9]

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[10] EXPERIMENTAL METHODS FOR DETERMINING LATCHUP PATHS IN INTEGRATED-CIRCUITS [J].

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