EXPERIMENTAL METHODS FOR DETERMINING LATCHUP PATHS IN INTEGRATED-CIRCUITS

被引:19
作者
JOHNSTON, AH
BAZE, MP
机构
关键词
D O I
10.1109/TNS.1985.4334105
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:4260 / 4265
页数:6
相关论文
共 9 条
[1]  
[Anonymous], COMMUNICATION
[2]   A SEM TECHNIQUE FOR EXPERIMENTALLY LOCATING LATCH-UP PATHS IN INTEGRATED-CIRCUITS [J].
DRESSENDORFER, PV ;
ARMENDARIZ, MG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1688-1693
[3]   USE OF A PULSED LASER AS AN AID TO TRANSIENT UPSET TESTING OF I2L LSI MICROCIRCUITS [J].
ELLIS, TD ;
KIM, YD .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) :1489-1493
[4]  
ESTREICH DB, 1982, IEEE T COMPUTER AIDE, V1
[5]  
HABING DH, 1965, IEEE T NUCL SCI, V12
[6]   EXPLOITATION OF A PULSED LASER TO EXPLORE TRANSIENT EFFECTS ON SEMICONDUCTOR-DEVICES [J].
HARDMAN, MA ;
EDWARDS, AR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1406-1410
[7]   TRANSIENT RADIATION SCREENING OF SILICON DEVICES USING BACKSIDE LASER IRRADIATION [J].
KING, EE ;
AHLPORT, B ;
TETTEMER, G ;
MULKER, K ;
LINDERMAN, P .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :1809-1815
[8]  
OCHOA A, 1983, IEEE T NUCL SCI, V30
[9]  
Wolf H., 1971, SEMICONDUCTORS