REVERSIBLE TEMPERATURE-DEPENDENT FERMI-LEVEL MOVEMENT FOR METAL-GAAS(110) INTERFACES

被引：34

作者：

VITOMIROV, IM

WADDILL, GD

ALDAO, CM

ANDERSON, SG

CAPASSO, C

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.40.3483

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3483 / 3486

页数：4

共 21 条

[1] DOPANT CONCENTRATION DEPENDENCES AND SYMMETRIC FERMI-LEVEL MOVEMENT FOR METAL N-TYPE AND P-TYPE GAAS(110) INTERFACES FORMED AT 60-K
ALDAO, CM
ANDERSON, SG
CAPASSO, C
WADDILL, GD
VITOMIROV, IM
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1989, 39 (17): : 12977 - 12980
[2] ALDAO CM, IN PRESS PHYS REV B
[3] ANDERSON S, UNPUB
[4] ANDERSON SG, IN PRESS PHYS REV B
[5] KINETICS STUDY OF INITIAL-STAGE BAND BENDING AT METAL GAAS(110) INTERFACES
CAO, R
MIYANO, K
KENDELEWICZ, T
CHIN, KK
LINDAU, I
SPICER, WE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 998 - 1002
[6] ELECTRONIC-STRUCTURE AND SCHOTTKY-BARRIER FORMATION OF AG ON N-TYPE GAAS(110)
CHIN, KK
PAN, SH
MO, D
MAHOWALD, P
NEWMAN, N
LINDAU, I
SPICER, WE
[J]. PHYSICAL REVIEW B, 1985, 32 (02): : 918 - 923
[7] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
CROWELL, CR
RIDEOUT, VL
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &
[8] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
CROWELL, CR
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &
[9] ATOMIC DISTRIBUTIONS ACROSS METAL-III-V-COMPOUND-SEMICONDUCTOR INTERFACES
HILL, DM
XU, F
LIN, ZD
WEAVER, JH
[J]. PHYSICAL REVIEW B, 1988, 38 (03): : 1893 - 1900
[10] METAL-DERIVED BAND-GAP STATES - TI ON GAAS(110)
LUDEKE, R
STRAUB, D
HIMPSEL, FJ
LANDGREN, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 874 - 878