POWER MOSFETS FOR MEDIUM-WAVE AND SHORT-WAVE TRANSMITTERS

被引:8
作者
IKEDA, H [1 ]
ASHIKAWA, K [1 ]
URITA, K [1 ]
机构
[1] HITACHI LTD,TAKASAKI WORKS,GUMMA,JAPAN
关键词
D O I
10.1109/T-ED.1980.19863
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:330 / 334
页数:5
相关论文
共 11 条
[1]  
BRIT DR, 1978, IEE INT BROADCA 0925, P112
[2]   MO GATE TETRODE [J].
BROWN, DM ;
CONNERY, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) :1302-1307
[3]   FREQUENCY AND POWER LIMITATIONS OF CLASS-D TRANSISTOR AMPLIFIERS [J].
CHUDOBIAK, WJ ;
PAGE, DF .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (01) :25-+
[4]  
HAYASHIDA T, COMMUNICATION
[5]  
NAGATA M, 1976, 8TH C INT SOL STAT C, P73
[6]  
OCHI S, UNPUBLISHED
[7]   EFFECT OF HEAT-TREATMENT AFTER DEPOSITION ON INTERNAL-STRESS IN MOLYBDENUM FILMS ON SIO2-SI SUBSTRATES [J].
OIKAWA, H ;
NAKAJIMA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1153-1156
[8]  
OKABE T, 1977, IEDM, P416
[9]   RADIO-FREQUENCY PULSEWIDTH MODULATION [J].
RAAB, FH .
IEEE TRANSACTIONS ON COMMUNICATIONS, 1973, CO21 (08) :958-966
[10]  
ROGERS JD, 1966, P NATL ELECTRON C, V22, P171