THE EFFECT OF INTERFACE BOND TYPE ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF GASB/INAS SUPERLATTICES

被引:65
作者
WATERMAN, JR
SHANABROOK, BV
WAGNER, RJ
YANG, MJ
DAVIS, JL
OMAGGIO, JP
机构
[1] Naval Res. Lab., Washington, DC
关键词
D O I
10.1088/0268-1242/8/1S/024
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of interface bond configuration on the structural and optical properties of short-period (almost-equal-to 50 angstrom) GaSb/InAs superlattices has been examined. Structures consisting of eight monolayers of GaSb and seven monolayers of InAs with either 'GaAs-like' or 'InSb-like' interface bonds were grown by MBE. Evidence for differences in the structural properties, vibrational properties and band structure of the two types of material was obtained using x-ray diffraction, Raman scattering, interband magneto-absorption and photoconductivity measurements.
引用
收藏
页码:S106 / S111
页数:6
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