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EXPERIMENTAL-DATA ON LIGHT-EMISSION BEHAVIOR FROM GAAS SCHOTTKY CONTACTS
被引:4
作者
:
ADACHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV, DEPT ELECTR ENGN, SENDAI, MIYAGI 980, JAPAN
TOHOKU UNIV, DEPT ELECTR ENGN, SENDAI, MIYAGI 980, JAPAN
ADACHI, H
[
1
]
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV, DEPT ELECTR ENGN, SENDAI, MIYAGI 980, JAPAN
TOHOKU UNIV, DEPT ELECTR ENGN, SENDAI, MIYAGI 980, JAPAN
HARTNAGEL, HL
[
1
]
机构
:
[1]
TOHOKU UNIV, DEPT ELECTR ENGN, SENDAI, MIYAGI 980, JAPAN
来源
:
INTERNATIONAL JOURNAL OF ELECTRONICS
|
1982年
/ 52卷
/ 01期
关键词
:
D O I
:
10.1080/00207218208901398
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:89 / 93
页数:5
相关论文
共 4 条
[1]
ADACHI H, 1981, UNPUB J VAC SCI TECH
[2]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
[J].
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
:768
-&
[3]
NEW ETCHING SOLUTION SYSTEM, H3PO4-H2O2-H2O, FOR GAAS AND ITS KINETICS
[J].
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
;
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(09)
:1510
-1514
[4]
WEAST RC, 1978, HDB CHEM PHYSICS
←
1
→
共 4 条
[1]
ADACHI H, 1981, UNPUB J VAC SCI TECH
[2]
SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
[J].
LIDA, S
论文数:
0
引用数:
0
h-index:
0
LIDA, S
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(05)
:768
-&
[3]
NEW ETCHING SOLUTION SYSTEM, H3PO4-H2O2-H2O, FOR GAAS AND ITS KINETICS
[J].
MORI, Y
论文数:
0
引用数:
0
h-index:
0
MORI, Y
;
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
WATANABE, N
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(09)
:1510
-1514
[4]
WEAST RC, 1978, HDB CHEM PHYSICS
←
1
→