CHARACTERIZATION OF THE IMPLANTATION DAMAGE IN SIO2 WITH X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：17

作者：

AJIOKA, T

USHIO, S

机构：

来源：

关键词：

D O I：

10.1063/1.96921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1398 / 1399

页数：2

共 15 条

[11] LINHARD J, 1963, MAT FYS MEDD PAN VID, V33, P3
[12] IONIZATION DILATATION EFFECTS IN FUSED SILICA FROM 2 TO 18-KEV ELECTRON-IRRADIATION
NORRIS, CB
EERNISSE, EP
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) : 3876 - 3882
[13] NUCHO RN, 1978, PHYSICS SIO2 ITS INT, P60
[14] EXTRUSION OF QUARTZ ON ION-BOMBARDMENT - FURTHER EVIDENCE FOR RADIATION-INDUCED STRESS RELAXATION OF SILICA NETWORK
PRIMAK, W
[J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4679 - 4686
[15] CHANGES IN CHEMICAL STABILITY OF ION-IMPLANTED SILICA GLASS
WEBB, AP
HOUGHTON, AJ
TOWNSEND, PD
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (03): : 177 - 182