THE EFFECT OF DISLOCATIONS ON THE RADIATION DEFECT ANNEALING PROCESSES IN SILICON

被引：20

作者：

KAZAKEVICH, LA

LUGAKOV, PF

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 74卷 / 01期

关键词：

D O I：

10.1002/pssa.2210740113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：113 / 122

页数：10

共 24 条

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