ANISOTROPIC MELTING AND EPITAXIAL REGROWTH OF LASER-IRRADIATED SILICON

被引：19

作者：

ALLMEN, MV ^{[1
]}

LUTHY, W ^{[1
]}

AFFOLTER, K ^{[1
]}

机构：

[1] UNIV BERN,INST APPL PHYS,CH-3012 BERN,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 09期

关键词：

D O I：

10.1063/1.90542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：824 / 826

页数：3

共 8 条

[1] PROPERTIES OF LASER-ASSISTED DOPING IN SILICON [J].

AFFOLTER, K ;

LUTHY, W ;

VONALLMEN, M .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :185-187

[2]

ALLMEN MV, 1978, IEEE J QUANTUM ELECT, V14, P85

[3] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

CELLER, GK ;

POATE, JM ;

KIMERLING, LC .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :464-466

[4] LASER-HEATING AND MELTING OF THIN-FILMS ON LOW-CONDUCTIVITY SUBSTRATES [J].

GHEZ, RA ;

LAFF, RA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2103-2110

[5]

KUTUKOVA OG, 1976, SOV PHYS SEMICOND+, V10, P265

[6] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON [J].

LEAMY, HJ ;

ROZGONYI, GA ;

SHENG, TT ;

CELLER, GK .

APPLIED PHYSICS LETTERS, 1978, 32 (09) :535-537

[7] SURFACE-STRUCTURE CHANGES BY LASER-PULSES IN SILICON [J].

VITALI, G ;

BERTOLOTTI, M ;

FOTI, G ;

RIMINI, E .

PHYSICS LETTERS A, 1977, 63 (03) :351-354

[8] LASER ANNEALING OF BORON-IMPLANTED SILICON [J].

YOUNG, RT ;

WHITE, CW ;

CLARK, GJ ;

NARAYAN, J ;

CHRISTIE, WH ;

MURAKAMI, M ;

KING, PW ;

KRAMER, SD .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :139-141

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