60-GHZ NOISE PERFORMANCE OF ION-IMPLANTED INXGA1-XAS MESFETS

Low-noise ion-implanted In(x)Ga(1-x)As MESFET's with 0.25-mu-m T-gates have been developed at 60 GHz. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-stage amplifier using these ion-implanted In(x)Ga(1-x)As MESFET's achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at GHz. When this amplifier was biased at 100% I(dss), it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFET's.