MILLIMETER-WAVE ION-IMPLANTED GRADED INXGA1-XAS MESFETS GROWN BY MOCVD

被引：6

作者：

WANG, GW

FENG, M

KALISKI, R

LIAW, YP

LAU, C

ITO, C

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：449 / 451

页数：3

共 8 条

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IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :630-632

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[4]

Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P180, DOI 10.1109/IEDM.1988.32784

[5] HIGH-PERFORMANCE IN0.08GA0.92AS MESFETS ON GAAS(100) SUBSTRATES [J].

SHIH, HD ;

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BRADSHAW, K ;

HUA, QT .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :604-606

[6]

STILLMAN GE, 1982, GAINASP ALLOY SEMICO

[7] HIGH-PERFORMANCE MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS [J].

WANG, GW ;

FENG, M ;

LAU, CL ;

ITO, C ;

LEPKOWSKI, TR .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) :95-97

[8]

WINDHORN TH, 1982, ELECTRON DEVIC LETT, V3, P18, DOI 10.1109/EDL.1982.25459

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