HIGH-PERFORMANCE IN0.08GA0.92AS MESFETS ON GAAS(100) SUBSTRATES

被引：11

作者：

SHIH, HD

KIM, B

BRADSHAW, K

HUA, QT

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：604 / 606

页数：3

共 13 条

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GHOSAL A, 1987, APPL PHYS LETT, V44, P773

[5] MILLIMETER-WAVE GAAS-FETS PREPARED BY MBE [J].

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TSERNG, HQ ;

SHIH, HD .

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[6]

KIM TS, 1988, 9TH MOL BEAM EPIT WO

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MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

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Osboum G.C., 1987, SEMICONDUCT SEMIMET, V24, P459, DOI [10.1016/S0080-8784(08)62455-2, DOI 10.1016/S0080-8784(08)62455-2]

[9]

SCHAFF WJ, 1987, J ELECTRON MATER, V16

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