HIGH-PERFORMANCE MILLIMETER-WAVE ION-IMPLANTED GAAS-MESFETS

被引：16

作者：

WANG, GW

FENG, M

LAU, CL

ITO, C

LEPKOWSKI, TR

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 02期

关键词：

D O I：

10.1109/55.32440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：95 / 97

页数：3

共 11 条

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[2] 0.1-MU-M GATE-LENGTH PSEUDOMORPHIC HEMTS [J].

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[3] ULTRA-LOW-NOISE CHARACTERISTICS OF MILLIMETER-WAVE HIGH ELECTRON-MOBILITY TRANSISTORS [J].

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IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) :521-523

[4]

FENG M, 1984, APPL PHYS LETT, V44, P231, DOI 10.1063/1.94681

[5] GAAS-MESFETS MADE BY ION-IMPLANTATION INTO MOCVD BUFFER LAYERS [J].

FENG, M ;

EU, VK ;

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[6] MICROWAVE PERFORMANCE OF A QUARTER-MICROMETER GATE LOW-NOISE PSEUDOMORPHIC INGAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

HENDERSON, T ;

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LESTER, LF .

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07) :L1340-L1343

[8] HIGH-PERFORMANCE SUBMICROMETER ALINAS-GAINAS HEMTS [J].

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BROWN, AS ;

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IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :41-43

[9] CHARGE CONTROL, DC, AND RF PERFORMANCE OF A 0.35-MU-M PSEUDOMORPHIC ALGAAS/INGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (02) :139-144

[10] A 0.1-MU-M GATE AL0.5IN0.5AS GA0.5IN0.5AS MODFET FABRICATED ON GAAS SUBSTRATES [J].

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CHEN, YK ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :818-823

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