ULTRA-LOW-NOISE CHARACTERISTICS OF MILLIMETER-WAVE HIGH ELECTRON-MOBILITY TRANSISTORS

被引：15

作者：

DUH, KHG ^{[1
]}

LIU, SMJ ^{[1
]}

LESTER, LF ^{[1
]}

CHAO, PC ^{[1
]}

SMITH, PM ^{[1
]}

DAS, MB ^{[1
]}

LEE, BR ^{[1
]}

BALLINGALL, J ^{[1
]}

机构：

[1] PENN STATE UNIV,CTR ELECTR MAT & DEVICES,DEPT ELECT ENGN,UNIVERSITY PK,PA 16802

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 10期

关键词：

D O I：

10.1109/55.17831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：521 / 523

页数：3

共 10 条

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[2]

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CHAO, PC ;

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DUH, KHG ;

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[6]

MISHRA UK, 1987, 45TH ANN DEV RES C

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MOLL N, 1987, 45TH ANN DEV RES C

[8] A FUNCTIONAL GAAS-FET NOISE MODEL [J].

PODELL, AF .

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[9] NOISE PARAMETERS AND LIGHT SENSITIVITY OF LOW-NOISE HIGH-ELECTRON-MOBILITY TRANSISTORS AT 300-K AND 12.5-K [J].

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CHAO, PC ;

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HWANG, JCM .

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[10]

VANDERZIEL A, 1962, P IRE, V50, P1808

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