HEAVY DOPING EFFECTS IN P-N-P BIPOLAR-TRANSISTORS

被引：100

作者：

TANG, DD

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 03期

关键词：

D O I：

10.1109/T-ED.1980.19899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：563 / 570

页数：8

共 30 条

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[24]

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[25] BIPOLAR-TRANSISTOR DESIGN FOR OPTIMIZED POWER-DELAY LOGIC-CIRCUITS [J].

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SOLOMON, PM .

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[26] TRANSPORT EQUATIONS IN HEAVY DOPED SILICON [J].

VANOVERSTRAETEN, RJ ;

DEMAN, HJ ;

MERTENS, RP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :290-298

[27]

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[28]

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[29]

WOODALL J, 1972, SOLID STATE ELECTRON, V15, P1339

[30]

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