TRANSITION FROM RELAXED TO DERELAXED AMORPHOUS-SILICON - OPTICAL CHARACTERIZATION

被引：15

作者：

REITANO, R

GRIMALDI, MG

BAERI, P

BELLANDI, E

BORGHESI, S

BARATTA, G

机构：

[1] DIPARTIMENTO FIS,I-27100 PAVIA,ITALY

[2] IST ASTRON,I-95100 CATANIA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.354637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical constants of relaxed, derelaxed, and partially relaxed amorphous silicon (a-Si) in the range 0.4-0.9 mum are reported. The thermodynamical state of amorphous silicon (a-Si) has been changed either by thermal treatments or low dose ion implantation. Ellipsometry has been used to evaluate the complex refractive index for several amorphous states with enthalpy content between that of the fully relaxed and fully derelaxed a-Si. We observed a strong correlation between the electronic structure as probed by our optical measurements and the topological short-range order as probed by Raman scattering.

引用

页码：2850 / 2855

页数：6

共 22 条

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Baeri P., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P227

[2]

CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

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